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BTA10GP Datasheet

  • BTA10GP

  • TRIACS

  • 4頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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BTA10 GP
TRIACS
.
.
.
.
FEATURES
LOW I
H
= 13mA max
HIGH SURGE CURRENT : I
TSM
= 120A
I
GT
SPECIFIED IN FOUR QUADRANTS
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA10 GP鈥檚 use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
ITSM
RMS on-state current
(360擄 conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25擄C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/碌s
Parameter
A1
A2
G
TO220AB
(Plastic)
Value
Tc = 90
擄C
tp = 8.3 ms
tp = 10 ms
10
126
120
72
10
50
- 40 to + 150
- 40 to + 125
260
Unit
A
A
I2t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
A2s
A/碌s
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
擄C
擄C
擄C
Symbol
Parameter
400 GP
BTA10-
600 GP
600
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
擄C
400
V
March 1995
1/4

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