Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT258S-800R
QUICK REFERENCE DATA
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
MAX. UNIT
800
5
8
75
V
A
A
A
PINNING - SOT428
PIN
NUMBER
1
2
3
tab
cathode
anode
gate
anode
PIN CONFIGURATION
tab
SYMBOL
a
k
2
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
鈮?/div>
111 藲C
all conduction angles
half sine wave; T
j
= 25 藲C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/碌s
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
800
5
8
75
82
28
50
2
5
5
0.5
150
125
1
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
V
W
W
藲C
藲C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Note: Operation above 110藲C may require the use of a gate to cathode resistor of 1k鈩?or less.
October 2002
1
Rev 2.000
1
2
3
4
5
6
