Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
applications
where a minimum I
GT
limit is needed.
These devices may be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT168 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT168
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
B
200
0.5
0.8
8
D
400
0.5
0.8
8
E
500
0.5
0.8
8
G
600
0.5
0.8
8
V
A
A
A
PINNING - TO92 variant
PIN
1
2
3
DESCRIPTION
anode
gate
cathode
PIN CONFIGURATION
SYMBOL
a
k
3 2 1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
lead
鈮?/div>
83 藲C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
j
= 25 藲C prior to surge
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/碌s
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
V
V
W
W
藲C
藲C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/碌s.
September 1997
1
Rev 1.100
1
2
3
4
5
6
