Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT148S-600Z
BT148M-600Z
Glass passivated, sensitive gate thyristor in
a plastic envelope, suitable for surface
mounting, intended for use in general
purpose switching and phase control
applications. These devices feature a
gate-cathode reverse breakdown voltage
specification. They can be interfaced
directly to microcontrollers, logic integrated
circuits and other low power gate trigger
circuits.
MAX.
600Z
600
2.5
4
35
UNIT
V
A
A
A
BT148S
(or BT148M)-
Repetitive peak off-state
voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
PINNING - SOT428
PIN
Standard Alternative
NUMBER
S
M
1
2
3
tab
cathode
anode
gate
anode
gate
anode
cathode
anode
PIN CONFIGURATION
tab
SYMBOL
a
k
2
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
PARAMETER
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
half sine wave; T
mb
鈮?/div>
111 藲C
all conduction angles
half sine wave; T
j
= 25 藲C prior to surge
t = 10 ms
t = 8.3 ms
I
2
t for fusing
t = 10 ms
Repetitive rate of rise of on-state I
TM
= 10 A; I
G
= 50 mA;
current after triggering
dI
G
/dt = 50 mA/碌s
Peak gate current
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
600
1
2.5
4
35
38
6.1
50
2
5
0.5
150
125
2
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
W
W
藲C
藲C
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/碌s.
2
Note: Operation above 110藲C may require the use of a gate to cathode resistor of 1k鈩?or less.
September 1997
1
Rev 1.100
1
2
3
4
5
6
