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BT136E Datasheet

  • BT136E

  • TRIACS SENSITIVE GATE

  • 6頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
BT136 series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT136-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600E
600
4
25
MAX.
800E
800
4
25
UNIT
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
鈮?/div>
107 藲C
full sine wave; T
j
= 25 藲C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/碌s
A/碌s
A/碌s
A/碌s
A
V
W
W
藲C
藲C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/碌s.
June 2001
1
Rev 1.400

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