MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSV52LT1/D
Switching Transistor
NPN Silicon
1
BASE
COLLECTOR
3
BSV52LT1
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
IC
Value
12
20
100
Unit
Vdc
Vdc
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BSV52LT1 = B2
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
(VCB = 10 Vdc, IE = 0, TA = 125擄C)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
12
ICBO
鈥?/div>
鈥?/div>
100
5.0
nAdc
碌A(chǔ)dc
鈥?/div>
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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