BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
SOT-363
A
D
2
G
1
S
1
Dim
A
B
B C
Min
0.10
1.15
2.00
0.30
1.80
戮
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
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Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KXX: Product marking code
YY: Date code
Marking Code: K84
Weight: 0.006 grams (approx.)
K
J
D
2
S
2
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS84DW
-50
-50
鹵20
-130
200
625
-55 to +150
Units
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
攏
300ms, duty cycle
攏
2%.
3. R
GS
攏
20KW.
DS30204 Rev. C-2
1 of 2
KXX YY
S
2
G
2
D
1
Mechanical Data
KXX YY
C
D
F
H
J
M
0.65 Nominal
H
K
L
M
D
G
1
S
1
F
L
All Dimensions in mm
G
2
D
1
BSS84DW
1
2
