BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
E
SOT-23
A
D
B
G
TOP VIEW
S
D
G
H
K
J
Drain
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
Mechanical Data
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Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K84
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Gate
M
a
Source
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS84
-50
-50
鹵20
-130
300
417
-55 to +150
Units
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Drain-Gate Voltage R
GS
攏
20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
A
= 25擄C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
戮
戮
戮
戮
-0.8
戮
.05
戮
戮
戮
戮
戮
Typ
戮
戮
戮
戮
戮
戮
戮
戮
戮
戮
戮
10
18
Max
戮
-15
-60
-100
鹵10
-2.0
10
戮
45
25
12
戮
戮
Unit
V
碌A(chǔ)
碌A(chǔ)
nA
nA
V
W
S
pF
pF
pF
ns
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50W, V
GS
= -10V
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= -250碌A(chǔ)
V
DS
= -50V, V
GS
= 0V, T
J
= 25擄C
V
DS
= -50V, V
GS
= 0V, T
J
= 125擄C
V
DS
= -25V, V
GS
= 0V, T
J
= 25擄C
V
GS
=
鹵20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= 0.100A
V
DS
= -25V, I
D
= 0.1A
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30149 Rev. 5 - 2
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BSS84
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