BSS80, BSS82
PNP Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 (NPN)
3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 77 擄C
Junction temperature
Storage temperature
2
1
VPS05161
Type
BSS80B
BSS80C
BSS82B
BSS82C
Marking
CHs
CJs
CLs
CMs
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
BSS80
40
60
5
800
1
100
200
330
150
BSS82
60
Unit
V
V
mA
A
mA
mW
擄C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
220
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-30-2001