SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 聳 SEPTEMBER 1995
7
PARTMARKING DETAILS 聴
BSS69 -
BSS70 -
BSS69R -
BSS70R -
L2
L3
L6
L7
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
t
j
:t
stg
MIN.
-40
-40
-5
-50
-0.25
-0.40
-0.65
30
40
50
30
15
60
80
100
60
30
200
250
4.5
10
Typ. 5
35
225
70
-0.85
-0.95
BSS69
BSS70
C
B
VALUE
-40
-40
-5
-200
-100
-50
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
擄C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)EBO
I
CES
V
CE(sat)
V
BE(sat)
h
FE
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Collector-Emitter Breakdown Voltage V
(BR)CEO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector- Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current
Transfer Ratio
BSS69
MAX. UNIT
V
V
V
nA
V
V
V
V
CONDITIONS.
I
C
=-1mA
I
C
=-10碌A(chǔ)
I
E
=-10碌A(chǔ)
V
CES
=-30V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100碌A(chǔ),
I
C
=-1mA,
I
C
=-10mA, V
CE
=-1V
I
C
=-50mA*,
I
C
=-100mA*,
I
C
=-100碌A(chǔ),
I
C
=-1mA,
I
C
=-10mA, V
CE
=-1V
I
C
=-50mA*,
I
C
=-100mA*,
150
Static Forward Current
Transfer Ratio
BSS70
h
FE
300
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
BSS69
BSS70
f
T
C
obo
C
ibo
N
t
d
; t
f
t
s
t
f
MHz
MHz
pF
pF
dB
ns
ns
ns
I
C
=-10mA, V
CE
=-20V
f=100MHz
V
CB
=-5V, f=100kHz
V
EB
=-0.5V, f=100kHz
I
C
=-100碌螒, V
CE
=-5V
R
S
=1k鈩? f=10Hz to15.7 kHz
V
CC
=-3V, I
C
=-10mA
I
B1
= I
B2
=-1mA
Switching times: Delay; Rise
Storage Time
Fall Time
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
