BSS 64
NPN
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
2.9
鹵0.1
1.1
NPN
250 mW
SOT-23
(TO-236)
0.01 g
0.4
3
Plastic case
Kunststoffgeh盲use
1.3
鹵0.1
Type
Code
1
2
2.5
max
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Ma脽e in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (dc)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Junction temp. 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BSS 64
80 V
120 V
5V
250 mW
1
)
100 mA
250 mA
100 mA
150
/
C
- 65鈥? 150
/
C
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, V
CB
= 90 V
I
E
= 0, V
CB
= 90 V, T
j
= 150
/
C
Emitter-Base cutoff current 鈥?Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
C
= 4 mA, I
B
= 0.4 mA
I
C
= 50 mA, I
B
= 15 mA
I
EB0
V
CEsat
V
CEsat
鈥?/div>
鈥?/div>
鈥?/div>
I
CB0
I
CB0
鈥?/div>
鈥?/div>
Kennwerte (T
j
= 25
/
C)
Typ.
鈥?/div>
鈥?/div>
1 nA
鈥?/div>
鈥?/div>
Max.
100 nA
50
:
A
200 nA
150 mV
200 mV
Collector saturation volt. 鈥?Kollektor-S盲ttigungsspg.
1
)
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
01.11.2003
16
BSS64 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
200mA
80V
200mV @ 15mA，50mA
-
20 @ 10mA，1V
350mW
60MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3
帶卷 (TR)
BSS64-NDBSS64TR
BSS64相關(guān)型號(hào)PDF文件下載
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