LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
PNP Silicon
3
COLLECTOR
BSS63LT1
3
1
BASE
1
2
2
EMITTER
CASE 318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Collector鈥?Emitter Voltage
Collector鈥?Emitter Voltage (R
BE
= 10 k鈩?
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CER
I
C
Value
鈥?00
鈥?10
鈥?00
Unit
Vdc
Vdc
mAdc
DEVICE MARKING
BSS63LT1 = T1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?00
碌A(chǔ))
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0
碌A(chǔ)dc
, I
E
=0, R
BE
=10 k鈩?)
Collector鈥揃ase Breakdown Voltage
(I
E
= 鈥?10
碌A(chǔ)dc,
I
E
=0 )
Emitter 鈥揃ase Breakdown Voltage
(I
E
= 鈥?10
碌A(chǔ))
Collector Cutoff Current
(V
CB
= 鈥?90 Vdc, I
E
=0 )
Collector Cutoff Current
(V
CB
= 鈥?110 Vdc, R
BE
=10 k鈩?)
Symbol
V
(BR)CEO
V
(BR)CER
V
(BR)CBO
V
(BR)CBO
I
CBO
I
CER
Min
鈥?100
鈥?110
鈥?110
鈥?6.0
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?100
鈥?10
鈥?200
Unit
Vdc
Vdc
Vdc
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
碌A(chǔ)dc
Emitter Cutoff Current
I
EBO
鈥?/div>
鈥?/div>
(V
EB
= 鈥?6.0 Vdc, I
C
= 0 )
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
M39鈥?/2
BSS63LT1相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
PNP Darlington transistors
PHILIPS
-
英文版
PNP Darlington transistors
PHILIPS [P...
-
英文版
PNP Darlington transistors
PHILIPS
-
英文版
PNP Darlington transistors
PHILIPS [P...
-
英文版
Surface mount Si-Epitaxial PlanarTransistors
DIOTEC
-
英文版
PNP Silicon AF and Switching Transistors (For general AF app...
-
英文版
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KEC
-
英文版
PNP General Purpose Amplifier
FAIRCHILD
-
英文版
SMALL SIGNAL PNP TRANSISTOR
-
英文版
PNP high-voltage transistor
PHILIPS
-
英文版
TRANS PNP 100V 0.2A SOT23
-
英文版
PNP General Purpose Amplifier
KEXIN [Gua...
-
英文版
Surface mount Si-Epitaxial PlanarTransistors
DIOTEC [Di...
-
英文版
SMALL SIGNAL PNP TRANSISTOR
STMICROELECTRON...
-
英文版
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KEC [KEC(K...
-
英文版
PNP Silicon AF and Switching Transistors (For general AF app...
SIEMENS [S...
-
英文版
PNP Silicon AF an Swiching Transistors
INFINEON [...
-
英文版
PNP high-voltage transistor
PHILIPS [P...
-
英文版
PNP General Purpose Amplifier
FAIRCHILD ...
-
英文版
Surface mount Si-Epitaxial PlanarTransistors
DIOTEC
1
2
