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SIPMOS

廬

Small-Signal Transistor

BSS 149

q

V

DS

200 V

I

D

0.35 A

R

DS(on)

3.5

鈩?/div>

N channel

Depletion mode

High dynamic resistance

Available grouped in

V

GS(th)

1

2

3

Type

Ordering

Code

Tape and Reel

Information

E6325: 2000 pcs/carton;

Ammopack

Pin Configuration Marking Package

1

G

2

D

3

S

SS149

TO-92

BSS 149 Q67000-S252

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage,

R

GS

= 20 k鈩?/div>

Gate-source voltage

Gate-source peak voltage, aperiodic

Continuous drain current,

T

A

= 34 藲C

Pulsed drain current,

Max. power dissipation,

Symbol

Values

200

鹵

14

鹵

20

0.35

1.05

1.0

鈥?55 鈥?+ 150

鈮?/div>

125

E

55/150/56

W

藲C

K/W

鈥?/div>

A

Unit

V

DS

V

DGR

V

GS

V

gs

I

D

I

D puls

P

tot

T

j

,

T

stg

R

thJA

鈥?/div>

T

A

= 25 藲C

T

A

= 25 藲C

Operating and storage temperature range

Thermal resistance, chip-ambient

(without heat sink)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Semiconductor Group

1

04.97

型號

版本

描述

廠商

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BSS149 Datasheet

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