BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
路
路
路
路
路
路
路
路
路
路
路
路
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
G
G
H
K
M
A
D
SOT-323
Dim
B C
S
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0擄
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8擄
A
B
C
D
E
G
H
J
K
L
M
Mechanical Data
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
0.65 Nominal
J
D
Drain
E
L
Gate
a
Source
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS138W
50
50
鹵20
200
200
625
-55 to +150
Units
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
A
= 25擄C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
戮
戮
0.5
戮
100
戮
戮
戮
戮
戮
Typ
75
戮
戮
1.2
1.4
戮
戮
戮
戮
戮
戮
Max
戮
0.5
鹵100
1.5
3.5
戮
50
25
8.0
20
20
Unit
V
碌A(chǔ)
nA
V
W
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50W
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 50V, V
GS
= 0V
V
GS
=
鹵20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250mA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
Note: 1. R
GS
攏
20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30206 Rev. 3 - 2
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