鈮?/div>
50
碌s)
Drain Current
Continuous(1)
Pulsed(2)
Symbol
VDSS
VGS
VGSM
ID
IDM
3
1
2
Value
100
鹵
20
鹵
40
0.17
0.68
Unit
Vdc
Vdc
Vpk
Adc
CASE 318 鈥?08, STYLE 21
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(3)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
TJ, Tstg
556
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BSS123LT1 = SA
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 250
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25擄C
TJ = 125擄C
Gate鈥揃ody Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
鈥?/div>
鈥?/div>
IGSS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
60
50
nAdc
100
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
ON CHARACTERISTICS(4)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain鈥揝ource On鈥揜esistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
1.
2.
3.
4.
VGS(th)
rDS(on)
gfs
0.8
鈥?/div>
80
鈥?/div>
5.0
鈥?/div>
2.8
6.0
鈥?/div>
Vdc
鈩?/div>
mmhos
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Width
300
m
s, Duty Cycle
2.0%.
FR鈥?5 = 1.0
0.75 0.062 in.
Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
v
v
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
BSS123LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
邏輯電平門(mén)
100V
170mA
6 歐姆 @ 100mA，10V
2.8V @ 1mA
-
20pF @ 25V
225mW
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BSS123LT1OSCT
BSS123LT1相關(guān)型號(hào)PDF文件下載
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