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BSS123LT1G Datasheet

  • BSS123LT1G

  • Power MOSFET 170 mAmps, 100 Volts

  • 4頁

  • ONSEMI

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BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N鈭扖hannel SOT鈭?3
Features
http://onsemi.com
鈥?/div>
Pb鈭扚ree Packages are Available
170 mAMPS
100 VOLTS
R
DS(on)
= 6
W
N鈭扖hannel
3
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
Value
100
20
40
0.17
0.68
Unit
Vdc
1
Vdc
Vpk
Adc
2
MAXIMUM RATINGS
Rating
Drain鈭扴ource Voltage
Gate鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭抮epetitive (t
p
鈮?/div>
50
ms)
Drain Current
鈭?Continuous (Note 1)
鈭?Pulsed (Note 2)
SA
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈭? Board
(Note 3) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
225
1.8
556
鈭?5 to +150
Unit
mW
mW/擄C
擄C/W
擄C
1
2
SA
M
= Device Code
= Date Code
PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
3. FR鈭? = 1.0

0.75

0.062 in.
1
2
Gate
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2005
1
March, 2005 鈭?Rev. 5
Publication Order Number:
BSS123LT1/D
M
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
SOT鈭?3
CASE 318
STYLE 21

BSS123LT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 100V

  • 170mA

  • 6 歐姆 @ 100mA,10V

  • 2.8V @ 1mA

  • -

  • 20pF @ 25V

  • 225mW

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • SOT-23-3(TO-236)

  • 帶卷 (TR)

  • BSS123LT1GOSTR

BSS123LT1G相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode L...
    INFINEON
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode L...
    SIEMENS [S...
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode L...
    INFINEON
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode L...
    SIEMENS [S...
  • 英文版
    SIPMOS Small-Signal Transistor (P channel Enhancement mode L...
    INFINEON
  • 英文版
    P-channel enhancement mode vertical D-MOS transistor
    PHILIPS
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-channel enhancement mode vertical D-MOS transistor
    PHILIPS [P...
  • 英文版
    SIPMOS Small-Signal Transistor (P channel Enhancement mode L...
    SIEMENS [S...
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode)
    INFINEON
  • 英文版
    SIPMOS Small-Signal-Transistor
    INFINEON [...
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode)
    SIEMENS [S...
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
    DIODES
  • 英文版
    N-channel enhancement mode vertical D-MOS transistor
    PHILIPS
  • 英文版
    SIPMOS Small-Signal Transistor (N channel Enhancement mode L...
    INFINEON

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