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BSS123A Datasheet

  • BSS123A

  • N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

  • 1頁

  • ZETEX

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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 鈥?APRIL 1998
FEATURES
* BV
DSS
= 100V
* Low Threshold
PARTMARKING DETAIL
鈥?SAA
BSS123A
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current at T
amb
=25擄C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
DS
V
DGR
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
100
170
680
鹵
20
360
-55 to +150
UNIT
V
V
mA
mA
V
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
SYMBOL MIN. TYP.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
80
25
9
4
10
10
15
25
100
0.5
2.0
50
500
6
10
MAX. UNIT CONDITIONS.
V
V
nA
nA
鈩?/div>
鈩?/div>
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
鈮?0V,
I
D
=280mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=0.25mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=鹵 20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
V
GS
=10V, I
D
=170mA
V
GS
=4.5V, I
D
=170mA
V
DS
=25V, I
D
=100mA
Turn-On Delay Time (2)(3) t
d(on)
Rise Time (2)(3)
t
r
t
f
Turn-Off Delay Time (2)(3) t
d(off)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300碌s. Duty cycle
鈮?%
(2) Sample test.
(3) Switching times measured with 50鈩?source impedance and <5ns rise time on a pulse generator

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