BSR50
BSR50
NPN Darlington Transistor
鈥?This device designed for applications requiring extremely high gain at
collector currents to 0.5A.
鈥?Sourced from Process 06.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature
Parameter
Ratings
45
60
5
1.5
-55 ~ 150
Units
V
V
V
A
擄C
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 45V, I
E
= 0
V
EB
= 4.0V, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 0.5A
I
C
= 500mA, I
B
= 500碌A(chǔ)
I
C
= 1.0A, I
B
= 4.0mA
I
C
= 500mA, I
B
= 500碌A(chǔ)
I
C
= 1.0mA, I
B
= 4.0mA
1,000
2,000
1.3
1.6
0.9
2.2
V
V
Min.
45
60
5
50
50
Typ.
Max.
Units
V
V
V
nA
nA
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25
擄
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
625
5.0
83.3
200
Units
mW
mW/擄C
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A, May 2002
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