BSR18A
BSR18A
C
E
SOT-23
Mark: T92
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10
碌A(chǔ)
to 100
mA. Sourced from Process 66.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
擄C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
*BSR18A
350
2.8
357
Units
mW
mW/擄C
擄C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
錚?997
Fairchild Semiconductor Corporation