BSR14
BSR14
C
E
SOT-23
Mark: U8
B
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process
19. See BCW65C for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
40
75
6.0
800
-55 to +150
Units
V
V
V
mA
擄C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
*BSR14
350
2.8
357
Units
mW
mW/擄C
擄C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
錚?997
Fairchild Semiconductor Corporation