鈥?/div>
Max.
100 nA
50
:
A
100 nA
250 mV
500 mV
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (dc)
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
T
j
T
S
60 V
70 V
Peak Collector current 鈥?Koll.-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Junction temp. 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
Characteristics (T
j
= 25
/
C)
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, - V
CB
= 60 V
I
E
= 0, - V
CB
= 60 V, T
j
= 150
/
C
Emitter-Base cutoff current 鈥?Emitterreststrom
I
C
= 0, - V
EB
= 5 V
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
- I
EB0
- V
CEsat
- V
CEsat
鈥?/div>
鈥?/div>
鈥?/div>
Collector saturation volt. 鈥?Kollektor-S盲ttigungsspg.
2
)
- I
CB0
- I
CB0
鈥?/div>
鈥?/div>
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% 鈥?Gemessen mit Impulsen t
p
= 300
:
s, Schaltverh盲ltnis
#
2%
2
01.11.2003
1
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