BSP19AT1 Datasheet

IC型號：
BSP19AT1
PDF描述：
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE ...
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122.44KB
PDF頁數(shù)：
6頁
芯片廠家：
MOTOROLA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by BSP19AT1/D

NPN Silicon

Epitaxial Transistor

This family of NPN Silicon Epitaxial transistors is designed for use as a general

purpose amplifier and in switching applications. The device is housed in the SOT-223

package which is designed for medium power surface mount applications.

鈥?/div>

High Voltage: V(BR)CEO of 250 and 350 Volts.

鈥?/div>

The SOT-223 package can be soldered using wave or reflow.

鈥?/div>

SOT-223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed

leads absorb thermal stress during soldering, eliminating the possibility of

damage to the die

鈥?/div>

Available in 12 mm Tape and Reel

T1 Configuration 鈥?7 inch/1000 unit reel

T3 Configuration 鈥?13 inch/4000 unit reel

鈥?/div>

PNP Complement is BSP16T1

COLLECTOR 2,4

BSP19AT1

BSP20AT1

Motorola Preferred Devices

SOT鈥?23 PACKAGE

NPN SILICON

HIGH VOLTAGE

TRANSISTOR

SURFACE MOUNT

BASE

EMITTER 3

CASE 318E-04, STYLE 1

TO-261AA

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Collector-Emitter Voltage (Open Base)

Collector-Base Voltage (Open Emitter)

Emitter-Base Voltage (Open Collector)

Collector Current (DC)

Total Power Dissipation @ TA = 25擄C(1)

Derate above 25擄C

Storage Temperature Range

Junction Temperature

Symbol

VCEO

VCBO

VEBO

Tstg

BSP19A

350

400

5.0

1000

0.8

6.4

鈥?65 to 150

150

BSP20A

250

300

Unit

Vdc

mAdc

Watts

mW/擄C

擄C

DEVICE MARKING

SP19A

SP20A

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance from Junction-to-Ambient

Maximum Temperature for Soldering Purposes

Time in Solder Bath

Symbol

胃JA

Max

156

260

Unit

擄C/W

擄C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Thermal Clad is a trademark of the Bergquist Company

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small鈥揝ignal

漏

Motorola, Inc. 1996

Transistors, FETs and Diodes Device Data

標(biāo)準(zhǔn)包裝
10
類別
分離式半導(dǎo)體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類型
NPN
電流 - 集電極 (Ic)（最大）
100mA
電壓 - 集電極發(fā)射極擊穿（最大）
350V
Ib、Ic條件下的Vce飽和度（最大）
500mV @ 4mA，50mA
電流 - 集電極截止（最大）
-
在某 Ic、Vce 時的最小直流電流增益 (hFE)
40 @ 20mA，10V
功率 - 最大
800mW
頻率 - 轉(zhuǎn)換
70MHz
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應(yīng)商設(shè)備封裝
SOT-223
包裝
Digi-Reel®
其它名稱
BSP19AT1OSDKR

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