MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSP16T1/D
SOT-223 Package
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
BSP16T1
Motorola Preferred Device
SOT鈥?23 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current
Base Current
Total Device Dissipation, TA = 25擄C (1)
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Tstg
TJ
Value
鈥?00
鈥?50
鈥?.0
鈥?000
鈥?00
1.5
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watts
擄C
擄C
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
q
JA
Max
83.3
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?0 mAdc, IB = 0, L = 25 mH)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
m
Adc, IE = 0)
Collector鈥揈mitter Cutoff Current
(VCE = 鈥?50 Vdc, IB = 0)
Collector鈥揃ase Cutoff Current
(VCB = 鈥?80 Vdc, IE = 0)
Emitter鈥揃ase Cutoff Current
(VEB = 鈥?.0 Vdc, IC = 0)
V(BR)CEO
鈥?00
V(BR)CBO
鈥?00
ICES
鈥?/div>
ICBO
鈥?/div>
IEBO
鈥?/div>
鈥?0
鈥?.0
碌Adc
鈥?0
碌Adc
鈥?/div>
碌Adc
鈥?/div>
Vdc
Vdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small鈥揝ignal
漏
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
BSP16T1 產(chǎn)品屬性
1,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
300V
2V @ 5mA，50mA
50µA
30 @ 50mA，10V
1.5W
15MHz
表面貼裝
TO-261-4，TO-261AA
SOT-223
帶卷 (TR)
BSP16T1相關型號PDF文件下載
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