Preliminary data
SIPMOS
廬
Small-Signal-Transistor
Features
路
BSO613SPV
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
S
S
S
G
1
2
3
4
Top View
8
7
6
5
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
V
DS
R
DS(on)
I
D
D
D
D
D
-60
0.13
-3.44
V
W
路
路
路
A
SIS00062
Type
BSO613SPV
Package
SO 8
Ordering Code
Q67042-S4021
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Value
-3.44
-13.8
150
0.25
6
Unit
A
I
D
I
D puls
E
AS
E
AR
dv/dt
T
A
= 25 擄C
Pulsed drain current
T
A
= 25 擄C
Avalanche energy, single pulse
mJ
I
D
= -3.44 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
kV/碌s
I
S
= -3.44 A,
V
DS
= -48 V, di/dt = 200 A/碌s,
T
jmax
= 150 擄C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
鹵20
2.5
-55... +150
55/150/56
V
W
擄C
T
A
= 25 擄C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
1999-11-22