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BSO305N Datasheet

  • BSO305N

  • SIPMOS Small-Signal-Transistor

  • 387.06KB

  • 8頁(yè)

  • INFINEON   INFINEON

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Preliminary Data
SIPMOS
餂?/div>
Small-Signal-Transistor
Features
鈥?/div>
Dual N Channel
鈥?/div>
BSO 305N
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
30
6
V
A
Enhancement mode
R
DS(on)
0.035
鈩?/div>
鈥?/div>
Avalanche rated
鈥?/div>
Logic Level
鈥?/div>
dv/dt rated
Type
BSO 305 N
Parameter
Continuous drain current,
one channel active
Package
SO 8
Symbol
Ordering Code
Q67041-S4028
Value
6
24
100
6
0.2
6
mJ
A
mJ
kV/碌s
Unit
A
Maximum Ratings,
at
T
j = 25 藲C, unless otherwise specified
I
D
I
Dpulse
E
AS
I
AR
E
AR
dv/dt
T
C
= 25 藲C,
T
A
= 25 藲C
Pulsed drain current,
one channel active
T
C
= 25 藲C
Avalanche energy, single pulse
I
D
= 6 A,
V
DD
= 25 V,
R
GS
= 25
鈩?/div>
Avalanche current,periodic limited by
T
jmax
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 6 A,
V
DS
= 24 V, di/dt = 200 A/碌s,
T
jmax
= 150 藲C
Gate source voltage
Power dissipation,
one channel active
V
GS
P
tot
T
j
T
stg
鹵20
2
-55 ... +150
-55 ... +150
55/150/56
V
W
藲C
T
C
= 25 藲C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99

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