BSM15GD60DN2 Datasheet

IC型號：
BSM15GD60DN2
PDF描述：
IGBT Power Module (Power module 3-phase full-bridge Includin...
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126.57KB
PDF頁數(shù)：
9頁
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INFINEON

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BSM 15 GD 60 DN2

IGBT Power Module

鈥?Power module

鈥?3-phase full-bridge

鈥?Including fast free-wheel diodes

鈥?Package with insulated metal base plate

Type

BSM 15 GD 60 DN2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Symbol

Values

600

Unit

600V

15A

Package

ECONOPACK 1

Ordering Code

C67076-A2510-A67

CGR

= 20 k鈩?/div>

Gate-emitter voltage

DC collector current

鹵 20

= 40 擄C

Pulsed collector current,

= 1 ms

Cpuls

= 40 擄C

Power dissipation per IGBT

tot

+ 125

-55 ... + 150

鈮?/div>

2.9

鈮?/div>

3.5

2500

40 / 125 / 56

sec

Vac

K/W

擄C

= 25 擄C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage,

= 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

stg

thJC

thJCD

Semiconductor Group

Jan-09-1997

型號

版本

描述

廠商

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