BSM100GAL120DN2 Datasheet

IC型號(hào)：
BSM100GAL120DN2
PDF描述：
IGBT Power Module (Single switch with chopper diode Includin...
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INFINEON

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BSM 100 GAL 120 DN2

IGBT Power Module

鈥?Single switch with chopper diode

鈥?Including fast free-wheeling diodes

鈥?Package with insulated metal base plate

Type

BSM 100 GAL 120 DN2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Package

Ordering Code

1200V 150A

HALF BRIDGE GAL 2 C67076-A2012-A70

Symbol

Values

1200

Unit

CGR

= 20 k鈩?/div>

Gate-emitter voltage

DC collector current

鹵 20

150

100

= 25 擄C

= 80 擄C

Pulsed collector current,

= 1 ms

Cpuls

300

200

= 25 擄C

= 80 擄C

Power dissipation per IGBT

tot

800

+ 150

-55 ... + 150

鈮?/div>

0.16

鈮?/div>

0.3

鈮?/div>

0.25

2500

55 / 150 / 56

Vac

K/W

擄C

= 25 擄C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage,

= 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

stg

thJC

thJCD

THJCDC

Semiconductor Group

Mar-29-1996

型號(hào)

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描述

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