鈾?/div>
.045 (1.15)
.037 (0.95)
Top View
.056 (1.43
)
.052 (1.33
)
1
2
max. .004 (0.1)
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
S29
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
SB
= 50 擄C
Power Dissipation at T
SB
= 50 擄C
Junction Temperature
Storage Temperature Range
1)
Value
400
400
鹵20
70
350
1)
150
鈥?5 to +150
Unit
V
V
V
mA
mW
擄C
擄C
鈥揤
DSS
鈥揤
DGS
V
GS
鈥?I
D
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
Inverse Diode
Symbol
Max. Forward Current (continuous)
at T
amb
= 25 擄C
Forward Voltage Drop (typ.)
at V
GS
= 0 V, I
F
= 350 mA, T
j
= 25 擄C
4/98
Value
350
1.0
Unit
mA
V
I
F
V
F
1
2
