鈾?/div>
.045 (1.15)
.037 (0.95)
Top View
.056 (1.43
)
.052 (1.33
)
1
2
max. .004 (0.1)
High breakdown voltage
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Specially suited for telephone subsets
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
S28
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T
SB
= 50 擄C
Junction Temperature
Storage Temperature Range
1)
Value
240
240
鹵 20
230
0.310
1)
150
鈥?5 to +150
Unit
V
V
V
mA
W
擄C
擄C
V
DSS
V
DGS
V
GS
I
D
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
Inverse Diode
Symbol
Max. Forward Current (continuous)
at T
amb
= 25 擄C
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.3 A, T
j
= 25 擄C
I
F
V
F
Value
0.3
0.85
Unit
A
V
4/98