BS817
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
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High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
G
E
D
G
H
K
J
L
M
SOT-23
A
D
TOP VIEW
S
B
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
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Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections (see Diagram)
Marking: S17
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
-V
DSS
-V
DGS
V
GS
-I
D
Pd
T
j
, T
STG
Value
200
200
鹵20
100
310
-55 to +150
Unit
V
V
V
mA
mW
擄C
Characteristic
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T
C = 50擄C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
@ T
A
= 25擄C unless otherwise specified
Characteristic
Symbol
I
F
V
F
Value
0.3
0.85
Unit
A
V
Max Forward Current (continuous)
Forward Voltage Drop (typical)
@ V
GS
= 0, I
F
= 0.3A, T
j
= 25擄C
Notes:
1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm
2
area.
2. Pulse Test: Pulse width = 80碌s, duty cycle = 1%.
DS11401 Rev. D-3
1 of 2
BS817
1
2
