BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM
1M X 16 bit
BS616UV1610
DESCRIPTION
The BS616UV1610 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 1,048,576 words by 16 bits and
operates from a wide range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.2uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable(CE1),
active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616UV1610 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV1610 is available in 48-pin BGA package.
鈥?Ultra low operation voltage : 1.8 ~ 2.3V
鈥?Ultra low power consumption :
Vcc = 2.0V C-grade: 25mA (Max.) operating current
I-grade : 30mA (Max.) operating current
1.2uA (Typ.) CMOS standby current
鈥?High speed access time :
-70
70ns (Max.) at Vcc=2V
-10
100ns (Max.) at Vcc=2V
鈥?Automatic power down when chip is deselected
鈥?Three state outputs and TTL compatible
鈥?Fully static operation
鈥?Data retention supply voltage as low as 1.5V
鈥?Easy expansion with CE2,CE1 and OE options
鈥?I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
SPEED
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
(ns)
Vcc=2V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
PKG TYPE
Vcc=2V
30uA
40uA
Vcc=2V
25mA
30mA
BGA
-
BGA
-
BGA
-
BGA
-
48
-
0810
48
-
0912
48
-
0810
48
-
0912
BS616UV1610BC
O
O
+0 C to +70
C
1.8 ~ 2.3V
BS616UV1610FC
BS616UV1610BI
O
O
-
40 C to +85 C 1.8 ~ 2.3V
BS616UV1610FI
70 / 100
70 / 100
PIN CONFIGURATIONS
1
A
B
C
D
E
F
G
H
LB
D8
D9
2
OE
UB
D10
D11
D12
D13
NC
.
A8
3
A0
A3
A5
A17
VSS
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
6
CE2
D0
D2
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 8192
8192
D0
16
Data
Input
Buffer
16
Column I/O
VSS
VCC
D14
D15
A18
VCC
VSS
D6
D7
A19
.
.
.
.
.
D15
CE2
CE1
WE
OE
UB
LB
Vcc
Gnd
.
.
.
.
Write Driver
Sense Amp
512
Column Decoder
16
Data
Output
16
Buffer
18
Control
Address Input Buffer
A11A10 A9 A8 A7 A6 A5 A18 A19
48-Ball CSP top View
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
R0201-BS616UV1610
1
Revision 2.2
April 2001
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