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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

512K X 16 bit

DESCRIPTION

BS616LV8011

鈥?Very low operation voltage : 2.7 ~ 3.6V

鈥?Very low power consumption :

Vcc = 3.0V C-grade: 40mA (Max.) operating current

I-grade : 50mA (Max.) operating current

1uA (Typ.) CMOS standby current

鈥?High speed access time :

-70

70ns (Max.) at Vcc=3.0V

-10

100ns (Max.) at Vcc=3.0V

鈥?Automatic power down when chip is deselected

鈥?Three state outputs and TTL compatible

鈥?Fully static operation

鈥?Data retention supply voltage as low as 1.5V

鈥?Easy expansion with CE1,CE2 and OE options

The BS616LV8011 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a wide range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 1uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable(CE1,CE2) and active LOW output enable(OE) and three-state

output drivers.

The BS616LV8011 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV8011 is available in 48-pin BGA package.

PRODUCT FAMILY

SPEED

(ns)

Vcc=3.0V

PRODUCT FAMILY

OPERATING

TEMPERATURE

+0

O

C to +70

O

C

-40

O

C to +85

O

C

Vcc

RANGE

2.7V ~ 3.6V

2.7V ~ 3.6V

POWER DISSIPATION

STANDBY

Operating

(I

CCSB1

, Max)

Vcc=3.0V

(I

CC

, Max)

Vcc=3.0V

PKG TYPE

BS616LV8011AC

BS616LV8011AI

70 / 100

70 / 100

16uA

24uA

40mA

50mA

BGA-48-0608

BGA-48-0608

PIN CONFIGURATIONS

1

A

B

C

D

E

F

G

H

X

D8

D9

VSS

VCC

D14

D15

A18

2

OE

X

D10

D11

D12

D13

NC

.

A8

3

A0

A3

4

A1

A4

5

A2

6

CE2

D0

D2

VCC

VSS

D6

BLOCK DIAGRAM

A4

A3

A2

A1

A0

A17

A16

A15

A14

A13

A12

Address

Input

Buffer

22

Row

Decoder

2048

Memory Array

2048 x 4096

CE1

D1

D3

D4

D5

A5

A17

Vss

A14

A12

A9

A6

A7

A16

A15

A 13

A10

4096

D0

16

Data

Input

Buffer

16

Column I/O

.

.

.

.

D15

.

.

.

.

Write Driver

Sense Amp

256

Column Decoder

16

Data

Output

16

Buffer

CE1

CE2

16

Control

Address Input Buffer

WE

A11

D7

NC

.

OE

WE

A11 A10 A9 A8 A7 A6 A5 A18

Vcc

Gnd

48-Ball CSP top View

X: Don鈥檛 care

Brilliance Semiconductor Inc

.

reserves the right to modify document contents without notice.

R0201-BS616LV8011

1

Revision 2.3

April 2002

next

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