April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
Features
400mA, 60V. R
DS(ON)
= 2
鈩?/div>
@ V
GS
= 10V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
_____________
___________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
Parameter
Drain-Source Voltage
T
A
= 25擄C unless otherwise noted
BS270
60
60
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1M
鈩?/div>
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50碌s)
鹵
20
鹵
40
400
2000
625
5
-55 to 150
300
I
D
P
D
T
J
,T
STG
T
L
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
mA
mW
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
R
胃
JA
Thermal Resistacne, Junction-to-Ambient
200
擄C/W
漏 1997 Fairchild Semiconductor Corporation
BS270.SAM
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