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BS223 Datasheet

  • BS223

  • DMOS Transistors (P-Channel)

  • 2頁

  • VISHAY   VISHAY

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BS223
DMOS Transistors (P-Channel)
TO-92
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
FEATURES
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
max.
鈭?/div>
.022 (0.55)
.098 (2.5)
D
G
S
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
amb
= 25 擄C
Power Dissipation at T
amb
= 25 擄C
Junction Temperature
Storage Temperature Range
1)
Value
60
60
鹵20
1
830
1)
150
鈥?5 to +150
Unit
V
V
V
A
mW
擄C
擄C
鈥揤
DSS
鈥揤
DGS
V
GS
鈥揑
D
P
tot
T
j
T
S
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode
Symbol
Max. Forward Current (continuous)
at T
amb
= 25 擄C
Forward Voltage Drop (typ.)
at V
GS
= 0 V, I
F
= 1 mA, T
j
= 25 擄C
I
F
V
F
Value
1
1.0
Unit
A
V
4/98

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