BS170RLRM Datasheet

IC型號(hào)：
BS170RLRM
PDF描述：
Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET
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PDF頁(yè)數(shù)：
4頁(yè)
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ONSEMI

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BS170

Preferred Device

Small Signal MOSFET

500 mA, 60 V

N鈭扖hannel TO鈭?2 (TO鈭?26)

Features

http://onsemi.com

鈥?/div>

Pb鈭扚ree Package is Available*

MAXIMUM RATINGS

Rating

Drain 鈭扴ource Voltage

Gate鈭扴ource Voltage

鈭?Continuous

鈭?Non鈭抮epetitive (t

鈮?/div>

ms)

Drain Current (Note)

Total Device Dissipation @ T

= 25擄C

Operating and Storage Junction

Temperature Range

Symbol

GSM

, T

stg

Value

鹵

0.5

350

鈭?5 to

+150

Unit

Vdc

Vpk

Adc

擄C

500 mA, 60 V

DS(on)

= 5

N鈭扖hannel

1. The Power Dissipation of the package may result in a lower continuous drain

current.

TO鈭?2 (TO鈭?26)

CASE 29

STYLE 30

MARKING DIAGRAM

& PIN ASSIGNMENT

BS170

YWW

Drain

Gate

Source

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb鈭扚ree strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Preferred

devices are recommended choices for future use

and best overall value.

漏

Semiconductor Components Industries, LLC, 2004

April, 2004 鈭?Rev. 4

Publication Order Number:

BS170/D

制造商
ON Semiconductor
產(chǎn)品種類
MOSFET
晶體管極性
N-Channel
汲極/源極擊穿電壓
60 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
500 mA
電阻汲極/源極 RDS（導(dǎo)通）
5 Ohms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-92
封裝
Ammo
正向跨導(dǎo) gFS（最大值/最小值）
0.2 S
最小工作溫度
- 55 C
功率耗散
0.35 W
工廠包裝數(shù)量
2000

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