2N7000KL/BS170KL
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
2 @ V
GS
= 10 V
4 @ V
GS
= 4.5 V
V
GS(th)
(V)
1.0 2.5
1 0 to 2 5
I
D
(A)
0.47
0.33
D
TrenchFETr Power MOSFET
D
ESD Protected: 2000 V
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Soild State Relays
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
TO-226AA
(TO-92)
S
1
Device Marking
Front View
鈥淪鈥?2N
7000KL
xxyy
鈥淪鈥?= Siliconix Logo
xxyy
= Date Code
TO-92-18RM
(TO-18 Lead Form)
D
1
Device Marking
Front View
鈥淪鈥?BS
170KL
xxyy
鈥淪鈥?= Siliconix Logo
xxyy
= Date Code
G
D
100
W
G
2
G
2
D
3
Top View
S
3
Top View
S
Ordering Information: 2N7000KL-TR1
Ordering Information: BS170KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
60
"20
0.47
0.37
1.0
0.8
0.51
156
鈭?5
to 150
Unit
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72705
S-40247鈥擱ev. A, 16-Feb-04
www.vishay.com
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