鈾?/div>
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
max.
鈭?/div>
.022 (0.55)
.098 (2.5)
D
G
S
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at T
amb
1)
= 25 擄C, at T
SB
2)
= 50 擄C
Power Dissipation at T
amb
1)
= 25 擄C, at T
SB
2)
= 50 擄C
Junction Temperature
Storage Temperature Range
1)
Value
60
60
鹵20
1.1
830
1)
150
鈥?5 to +150
Unit
V
V
V
A
mW
擄C
擄C
V
DSS
V
DGS
V
GS
I
D
P
tot
T
j
T
S
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).
4/98
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