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BS107 Datasheet

  • BS107

  • N-CHANNEL ENHANCEMENT MODE TRANSISTOR

  • 2頁

  • DIODES

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BS107
N鈥揅HANNEL ENHANCEMENT MODE TRANSISTOR
Features
路
路
路
路
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
E
A
TO-92
B
Dim
A
B
Min
4.45
4.46
12.7
0.41
3.43
2.42
1.14
Max
4.70
4.70
鈥?/div>
0.63
3.68
2.67
1.40
Mechanical Data
路
路
路
路
Case: TO-92 Plastic
Leads: Solderable per
MIL-STD-202, Method 208
Pin Connections: See Diagram
Weight: 0.18 grams (approx.)
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGS
V
GS
I
D
P
d
T
j
, T
STG
D
BOTTOM
VIEW
C
C
D
E
G
H
SG D
H
G
H
All Dimensions in mm
Maximum Ratings
Drain-Source-Voltage
Drain-Gate-Voltage
Characteristic
Value
200
200
鹵20
120
830
-55 to +150
Unit
V
V
V
mA
mW
擄C
Gate-Source-Voltage (pulsed) (Note 2)
Drain-Current (continuous)
Power Dissipation @T
C
= 25擄C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
@ T
A
= 25擄C unless otherwise specified
Characteristic
Symbol
I
F
V
F
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
r
DS(ON)
R
qJA
C
iss
C
oss
C
rss
t
on
t
off
Min
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
230
鈥?/div>
鈥?/div>
1.8
18
鈥?/div>
58
8.0
1.5
5.0
15
Max
鈥?/div>
10
30
1.0
3
28
150
鈥?/div>
鈥?/div>
Unit
V
nA
nA
碌A(chǔ)
V
W
K/W
pF
ns
Test Condition
I
D
= 100碌A(chǔ), V
GS
= 0
V
GS
= 15V, V
DS
= 0
V
DS
=130V, V
GS
= 0
V
DS
= 70V, V
GS
= 0.2V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 2.8V, I
D
= 20 mA
(Note 1)
V
DS
= 20V, V
GS
= 0,f =1.0MHz
V
GS
= 10V, V
DS
= 10V,
R
D
= 100W
Value
0.5
0.85
Unit
A
V
Maximum Forward Current (continuous)
Forward Voltage Drop (typical)
@ V
GS
= 0, I
F
= 0.5A, T
j
= 25擄C
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Turn On Time
Turn Off Time
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80碌s, duty factor = 1%.
DA21804 Rev. C-3
1 of 2
BS107

BS107 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 200 V

  • +/- 20 V

  • 250 mA

  • 14 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-92

  • Bulk

  • 0.0004 S

  • - 55 C

  • 0.35 W

  • 1000

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