TECHNICAL NOTE
Double-cell Memory for Plug & Play
DDR/DDR2
(For memory module) SPD Memory
BR34E02-W
鈼廌escription
BR34E02FVT-W is 256脳8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
鈼廎eatures
銉?56脳8
bit architecture serial EEPROM
銉籛ide
operating voltage range: 1.7V-3.6V
銉籘wo-wire
serial interface
銉籋igh
reliability connection using Au pads and Au wires
銉籗elf-Timed
Erase and Write Cycle
銉籔age
Write Function (16byte)
銉籛rite
Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom)
: 00h-7Fh
Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
銉籐ow
Power consumption
Write
(at 1.7V ) : 0.4mA (typ.)
Read
(at 1.7V ) : 0.1mA(typ.)
Standby ( at 1.7V ) : 0.1渭A(typ.)
銉籇ATA
security
Write protect feature (WP pin)
Inhibit to WRITE at low V
CC
銉籆ompact
package: TSSOP-B8, VSON008X2030
銉籋igh
reliability fine pattern CMOS technology
銉籖ewriting
possible up to 1,000,000 times
銉籇ata
retention: 40 years
銉籒oise
reduction Filtered inputs in SCL / SDA
銉籌nitial
data FFh at all addresses
鈼廈R34E02-W
Series
Capacity Bit format
2Kbit
256X8
Type
BR34E02-W
Power Source Voltage
1.7V錕?frac12;錕?.6V
TSSOP-B8