Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
application is transient overvoltage
protection in telecommunications
equipment.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
I
H
I
TSM
PARAMETER
BR211SM-140 to BR211SM-280
Breakover voltage
Holding current
Non-repetitive peak current
MIN.
140
150
-
MAX.
280
-
40
UNIT
V
mA
A
OUTLINE - SOD106
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
D
I
TSM1
I
TSM2
I
2
t
dI
T
/dt
P
tot
P
TM
T
stg
T
a
T
vj
PARAMETER
Continuous voltage
Non repetitive peak current
Non repetitive on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
(BO)
turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
10/320
碌s
impulse equivalent to
10/700
碌s,
1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
j
= 70 藲C prior to surge
t
p
= 10 ms
t
p
= 10
碌s
T
a
= 25藲C
t
p
= 1 ms; T
a
= 25藲C
off-state
on-state
CONDITIONS
MIN.
-
-
-
-
-
-
-
- 40
-
-
MAX.
75% of
V
(BO)typ
40
15
1.1
50
1.2
50
150
70
150
UNIT
V
A
A
A
2
s
A/碌s
W
W
藲C
藲C
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
Z
th j-a
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
CONDITIONS
MIN.
-
pcb mounted; minimum footprint
t
p
= 1 ms
-
-
TYP.
-
100
2.62
MAX.
12
-
-
UNIT
K/W
K/W
K/W
August 1996
1
Rev 1.100