Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03 LLD
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope suitable for surface
mounting. The device is intended for
use in triac and thyristor trigger
circuits.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
V
O
I
FRM
PARAMETER
Breakover voltage
Output voltage
Repetitive peak forward current
MIN.
28
7
-
MAX.
36
-
2
UNIT
V
V
A
OUTLINE - SOD80
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
I
FRM
P
tot
T
stg
T
j
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
CONDITIONS
t
鈮?/div>
10
碌s,
T
tp
鈮?/div>
50藲C; f = 60 Hz
T
tp
= 50藲C
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
藲C
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-tp
PARAMETER
CONDITIONS
MIN.
-
TYP.
330
MAX. UNIT
-
K/W
Thermal resistance junction to PCB mounted
tie point
CHARACTERISTICS
T
a
= 25 藲C unless otherwise stated.
SYMBOL
V
(BO)
|V
(BO)+
| - |V
(BO)-
|
V
O
I
(BO)
dV
(BO)
/dT
t
r
PARAMETER
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V
(BO)
Risetime
CONDITIONS
I = I
(BO)
I = I
(BO)
, see fig: 1
R
L
= 20
鈩?
Circuit of fig: 2
V = V
(BO)
I
p
= 0.5 A; Circuit of fig: 2
MIN.
28
-
7
-
-
-
TYP.
32
-
-
-
0.1
1.5
MAX. UNIT
36
3.5
-
50
-
V
V
V
碌A
%/K
碌s
February 1996
1
Rev 1.000
1
2
3
