BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
FEATURES
鈥?Hermetically sealed package
鈥?Narrow reception angle
0.209 (5.31)
0.184 (4.67)
鈥?European 鈥淧ro Electron鈥?registered
DESCRIPTION
0.030 (0.76)
NOM
0.255 (6.48)
鈥?The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
0.50 (12.7)
MIN
SCHEMATIC
C
0.020 (0.51) 3X
Base
0.100 (2.54)
0.050 (1.27)
B
Emitter
Collector
(Case)
E
0.040 (1.02)
0.040 (1.02)
45擄
脴0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of 鹵 .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 3.00 mW/擄C above 25擄C ambient.
2. Derate power dissipation linearly 6.00 mW/擄C above 25擄C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16鈥?/div>
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (T
A
= 25擄C)
(1)
Power Dissipation (T
C
= 25擄C)
(2)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CEO
V
CBO
V
EBO
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
45
45
5
300
600
Unit
擄C
擄C
擄C
擄C
V
V
V
mW
mW
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300279
3/13/01
1 OF 4
www.fairchildsemi.com
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