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BPV11F Datasheet

  • BPV11F

  • Silicon NPN Phototransistor

  • 6頁

  • VISHAY   VISHAY

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BPV11F
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T鈥?
plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (
l
p
900nm).
The viewing angle of
15
makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
y
Features
D
D
D
D
D
Very high radiant sensitivity
Standard T鈥?
(酶 5 mm) package
IR filter for GaAs emitters (950 nm)
Angle of half sensitivity
=
15
Base terminal available
12784
Applications
Detector for industrial electronic circuitry, measurement and control
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
80
70
5
50
100
150
100
鈥?5...+100
260
350
Unit
V
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
47
C
x
x
t
x
5 s, 2 mm from body
Document Number 81505
Rev. 3, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (6)

BPV11F 產(chǎn)品屬性

  • BPV11F

  • 2,000

  • 傳感器,轉(zhuǎn)換器

  • 光學(xué) - 光電檢測器 - 光電晶體管

  • *

  • 70V

  • 10mA

  • 50nA

  • 930nm

  • 30°

  • 150mW

  • 通孔

  • 頂視圖

  • 徑向,5mm 直徑(T 1 3/4)

  • 751-1004

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