BIPOLARICS, INC.
Part Number BPT1819E03
NPN SILICON MICROWAVE POWER TRANSISTORS
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor
intended for linear power applications at frequencies of 1.8 to 1.9 GHz.
Typical applications include amplifiers in aeronautical, maritime and
personal communication applications. The BPT1819E03 is bonded
common emitter for linear applications. Linear output power of 3
Watts can be achieved. BeO flange packaging makes this device
excellent for industrial and military products. Uniformity and reliability
are assured by the use of ion implanted junctions, ion implanted ballast
resistors and gold metallization.
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High Output Power
3 W @ 1.8 GHz
High Gain Bandwidth Product
f = 6.0 GHz typ @ I
C
= 480 mA
t
High Gain
G
PE
=
10.0 dB @ 1.8 GHz
Gold Metallization System
High thermal efficiency BeO 6 Lead
Flange package (package 36)
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
PERFORMANCE DATA:
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Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Thermal Resistance
40
20
3.0
960
200
-65 to 200
11
V
V
V
mA
o
C
o
C
C/W
胃
JC
UNIT
MIN.
TYP.
MAX.
V
CE
= 15V, I
C
= 480 mA, Class A,Common Emitter unless stated
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 0.1 mA
V
20
P
1dB
G
PE
Output Power at 1dB compression
Class A P
OUT
= 4 W
Efficiency:
f = 1.8 GHz
f = 1.8 GHz
W
dB
3.0
10.0
畏
h
FE
C
CB
Class A
Class C
f = 1.0 MHz
%
30
65
20
60
100
Forward Current Transfer Ratio:
V
CE
= 8.0V, I
C
= 400 mA
Collector Base Capacitance:
f = 1.0 MHz
I
E
= 0
pF
8.0
P
T
Total Power Dissipation
W
12
1
