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BN1A4Z Datasheet

  • BN1A4Z

  • on-chip resistor PNP silicon epitaxial transistor For mid-sp...

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DATA SHEET
COMPOUND TRANSISTOR
BN1A4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
鈥?On-chip bias resistor
(R
1
= 10 k鈩?
鈥?Complementary transistor with BA1A3Q
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
鈭?0
鈭?0
鈭?
鈭?00
鈭?00
250
150
鈭?5
to +150
Unit
V
V
V
mA
mA
mW
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25擄C)
擄
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
t
on
t
stg
t
off
V
CC
=
鈭?.0
V, R
L
= 1.0 k鈩?/div>
V
I
=
鈭?.0
V, PW = 2.0
碌
s
duty cycle鈮? %
Conditions
V
CB
=
鈭?0
V, I
E
= 0
V
CE
=
鈭?.0
V, I
C
=
鈭?.0
mA
V
CE
=
鈭?.0
V, I
C
=
鈭?0
mA
I
C
=
鈭?.0
mA, I
B
=
鈭?.25
mA
V
CE
=
鈭?.0
V, I
C
=
鈭?00
碌
A
V
CE
=
鈭?.2
V, I
C
=
鈭?.0
mA
鈭?.0
7.0
135
100
190
170
鈭?.07
鈭?.57
鈭?.9
10
13.0
0.2
5.0
6.0
鈭?.2
鈭?.5
MIN.
TYP.
MAX.
100
600
Unit
nA
鈭?/div>
鈭?/div>
V
V
V
k鈩?/div>
碌
s
碌
s
碌
s
** Pulse test PW
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2 %
h
FE
CLASSIFICATION
Marking
h
FE1
Q
135 to 270
P
200 to 400
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13584EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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