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BMT1720B20 Datasheet

  • BMT1720B20

  • SILICON MICROWAVE POWER TRANSISTOR

  • 5頁(yè)

  • ETC

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BIPOLARICS, INC
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
鈥?/div>
Common Base, Class C Package Configuration
鈥?/div>
High Output Power
20 W @ 1.7 to 2.0 GHz
鈥?/div>
High Gain Bandwidth Product
f = 6.0 GHz @ I
C
= 3200 mA
t
鈥?/div>
High Gain
G
PE
= 7.0 dB to 8.2 dB
鈥?/div>
High Reliability
Gold Metallization
Nitride Passivation
鈥?/div>
Diffused Ballast Resistors
鈥?/div>
BeO Package
鈥?/div>
Built-In Matching Network
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
Junction Temperature
Storage Temperature
Thermal Resistance
50
28
3.5
3200
200
-65 to 200
6.5
V
V
V
mA
o
o
for Broadband Operation
PERFORMANCE DATA:
鈥?/div>
Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CE
=28V, I
C
= 3200 mA, Class C
C
T
STG
C
胃
JC
C/W
UNIT
MIN.
TYP.
MAX.
P
1dB
Power output at 1 dB compression:
f = 1.7 GHz
W
20
畏
h
FE
Collector Efficiency
Class C
%
50
Forward Current Transfer Ratio: V
CB
= 5V, I
C
= 100 mA
10
60
100
C
OB
Output Capacitance:
f = 1 MHz, I
E
= 0
pF
4.5
P
T
Total Power Dissipation
W
40

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