BLH3355
NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF transistor for
microwave low-noise amplification
Features
Low noise and high gain bandwidth product
High power gain
Applications
UHF / VHF wide band amplifier
Structure
Planar type
Electrodes: Aluminum alloy
Backside metal: Au alloy
Size
Chip size: 370碌m 脳370碌m
Chip thickness: 220鹵20碌m.
Pad size:
蠁100碌m
ABSOLUTE MAXIMUM RATING
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3.0
100
200
150
鈭?5
to +150
Unit
V
V
V
mA
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
Symbol
I
CBO
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test conditions
V
CB
=10V, I
E
=0mA
V
EB
=1.0V, I
C
=0mA
V
CE
=10V, I
C
=20mA
Min.
-
-
50
Typ.
-
-
120
Max.
1.0
1.0
250
Unit
碌A(chǔ)
碌A(chǔ)
nA
o
http://www.belling.com.cn
-1-
Total
2 Pages
8/18/2006
1
2
