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BLF369 Datasheet

  • BLF369

  • VHF power LDMOS transistor

  • 13頁(yè)

  • PHILIPS

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BLF369
VHF power LDMOS transistor
Rev. 02 鈥?8 December 2006
Objective data sheet
1. Product pro鏗乴e
1.1 General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial
applications in the HF/VHF band.
Table 1.
Typical performance
Typical RF performance at V
DS
= 32 V and T
h
= 25
擄
C in a common-source 225 MHz test circuit.
[1]
Mode of operation
CW, class AB
2-tone, class AB
[1]
f
(MHz)
225
f
1
= 225; f
2
= 225.1
P
L
(W)
500
-
P
L(PEP)
(W)
-
500
G
p
(dB)
18
19
畏
D
(%)
60
47
IMD3
(dBc)
-
鈭?8
T
h
is the heatsink temperature.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical CW performance at 225 MHz, a drain-source voltage V
DS
of 32 V and a
quiescent drain current I
Dq
= 2
脳
1.0 A:
N
Load power P
L
= 500 W
N
Power gain G
p
鈮?/div>
18 dB
N
Drain ef鏗乧iency
畏
D
= 60 %
I
Advanced 鏗俛nge material for optimum thermal behavior and reliability
I
Excellent ruggedness
I
High power gain
I
Designed for broadband operation (HF/VHF band)
I
Source on underside eliminates DC isolators, reducing common-mode inductance
I
Easy power control
I
Integrated ESD protection
1.3 Applications
I
Communication transmitter applications in the UHF band
I
Industrial applications in the UHF band

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