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BLA1011-300 Datasheet

  • BLA1011-300

  • Avionics LDMOS transistors

  • 11頁

  • PHILIPS

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BLA1011-300
Avionics LDMOS transistors
Rev. 02 鈥?5 February 2008
Product data sheet
1. Product pro鏗乴e
1.1 General description
300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from
1030 MHz to 1090 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
擄
C in a common source class-AB production test circuit; t
p
= 50
碌
s;
未
= 2 %.
Mode of operation
Pulsed class-AB
f
(MHz)
1030 to 1090
I
Dq
(mA)
150
V
DS
(V)
32
P
L
(W)
300
G
p
(dB)
16.5
畏
D
(%)
57
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply
voltage of 32 V, an I
Dq
of 150 mA, a t
p
of 50
碌s
and a
未
of 2 %:
N
Output power = 300 W
N
Power gain = 16.5 dB (typ)
N
Ef鏗乧iency = 57 % (typ)
I
Easy power control
I
Excellent ruggedness
I
High ef鏗乧iency
I
Excellent thermal stability
I
Designed for operation in 1030 MHz to 1090 MHz band
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I
RF power ampli鏗乪rs for Avionics applications in the 1030 MHz to 1090 MHz frequency
band

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