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BLA0912-250

Avionics LDMOS transistor

Rev. 02 鈥?22 July 2004

Product data sheet

1. Product pro鏗乴e

1.1 General description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead

SOT502A 鏗俛nge package with a ceramic cap. The common source is connected to the

mounting 鏗俛nge.

1.2 Features

s

s

s

s

High power gain

Easy power control

Excellent ruggedness

Source on mounting base eliminates DC isolators, reducing common mode

inductance.

1.3 Applications

s

Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such

as Mode-S, TCAS and JTIDS, DME or TACAN.

1.4 Quick reference data

Table 1:

Quick reference data

Typical RF performance measured in common source class-AB circuit at P

L

= 250 W and 960 MHz to 1215 MHz frequency

band. T

h

= 25

擄

C; Z

th

= 0.15 K/W; unless speci鏗乪d otherwise.

Mode of operation

All modes

TCAS:

1030 MHz to 1090 MHz

Mode-S:

1030 MHz to 1090 MHz

JTIDS:

960 MHz to 1215 MHz

Conditions

t

p

= 100

碌s; 未

= 10 %

t

p

= 32

碌s; 未

= 0.1 %

t

p

= 128

碌s; 未

= 2 %

t

p

= 340

碌s; 未

= 1 %

t

p

= 3.3 ms;

未

= 22 %

V

DS

(V)

36

36

36

36

36

P

L

(W)

250

250

250

250

200

G

p

鈭咷

p

畏

D

(dB) (dB) (%)

13.5 0.8

14.0 0.8

13.5 0.8

13.5 0.8

13.0 1.2

50

50

50

50

45

Pulse droop

(dB)

0.1

0

0.1

0.2

0.2

t

r

t

f

Z

th(j-h)

蠒

R

(ns) (ns) (K/W) (deg)

25

25

25

25

25

6

6

6

6

6

0.18

0.07

0.15

0.20

0.45

鹵5

鹵5

鹵5

鹵5

鹵5

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